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Meco DPL

For next generation silicon solar cells where the SiNx layer has been opened by laser ablation the Meco Direct Plating Line (DPL) can plate a dense layer of Ni-Ag, Ni-Cu-Ag or Ni-Cu-Sn onto high-ohmic emitters. This results in an efficiency increase up to 1% (abs.) and a tremendous cost reduction (US$/Wp) as no Ag paste is needed anymore for the frontside metallization.

Key Features

  • Vertical product handling
  • Low drag-out of plating chemicals
  • Compact machine design/easy to maintain
  • Inline plating process/high up time
  • Efficiency improvement : up to 1 % (abs.) with direct metallization  
  • Bill of Materials (BoM) up to 0.05 US$/Wp lower as no more Ag is needed for frontside metallization
  • Proven machine concept (> 350 machines in semiconductor industry)
  • Process start-up by Meco

Specifications

  • Cell size: 5 x 5", 6 x 6"
  • Metal options: Ni-Ag, Ni-Cu-Ag or Ni-Cu-Sn
  • Seed layer: Silicon emitter (< 120 Ohm/square)
  • Process speed : 1,500 - 3,000 UPH (pilot line : 100 - 500 UPH)
  • Production capacity: 50 - 100 MW
  • Cell efficiency increase: Up to 1% (abs.)
  • Savings in Ag paste: 100%

Besi Netherlands B.V.

Tel: +31 26 319 6100

sales@remove-mebesi.com

Besi Switzerland AG

Tel: +41 41 749 5111

sales@remove-mebesi.com

Besi Austria GmbH

Tel: +43 5337 6000

sales@remove-mebesi.com

Meco Equipment Engineers B.V.

Tel: +31 416 384 384

sales@remove-mebesi.com

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